A semiconductor device structure that layers an intrinsic semiconductor between a p-type semiconductor and an n-type semiconductor; this structure is most often used with amorphous silicon devices
US Department of Labor, Electric Power eTool: Glossary of Terms, Occupational Safety & Health Administration OSHA, Washington, D.C., USA 2010. https://www.osha.gov/SLTC/etools/electric_power/gl ossary.html, (OSHA/ Electr Pwr - Amer) {618}